AZ光刻膠系列
厚度從1μm到150μm以及更厚
以AZ1500為例
為廣泛應用于半導體制造領域而優化的高感光度G線正型光刻膠
High sensitivity broad-band,g-line positive-tone photoresist,optimized for
wide production of semiconductor
特 征/FEATURES
1) 高感光度,高產出率
2) 高附著性,特別為濕法刻蝕工藝改進
3) 廣泛應用于全球半導體行業
1) Achievement for high sensitivity and high throughput
2) Improvement for wet etching by high adhesion
3) Trust on delivery reference at wide field and industry
參考工藝條件/SAMPLE PROCESS CONDITIONS
前烘：100℃ 60秒 (DHP)
曝光：G線步進式曝光機/接觸式曝光機
顯影：AZ300MIF (2.38%) 23℃ 60秒 Puddle
清洗：去離子水30秒
后烘：120℃ 120秒 (DHP)
剝離：AZ剝離液及/或氧等離子體灰化
Pre-bake: 100℃ 60sec.(DHP)
Exposure: g-line stepper and/or Contact Aligner
Developing: AZ300MIF 23℃ 60sec.Puddle
Rinse: DI-water 30sec.
Post-bake: 120℃ 120sec.(DHP)
Stripping: AZ Remover and/or O2 plasma-ashing
產品型號(PRODUCT RANGE)
Product Name
AZ1500
Viscosity
4.4mPa
20mPa
38mPa
90mPa
產品特性(PRODUCT PERFORMANCE)
Eth
Eop
耐熱性(Thermal Stability)
86msec.
94msec.(1.1xEth)
125℃
